|کد مقاله||سال انتشار||مقاله انگلیسی||ترجمه فارسی||تعداد کلمات|
|140562||2018||10 صفحه PDF||سفارش دهید||2321 کلمه|
Publisher : Elsevier - Science Direct (الزویر - ساینس دایرکت)
Journal : Physica B: Condensed Matter, Volume 537, 15 May 2018, Pages 202-206
Quantum-dot cellular automata is one of the recent new technologies at the nanoscale that can be a suitable replacement for CMOS technology. The circuits constructed in QCA technology have desirable features such as low power consumption, high speed and small size. These features can be more distinct in memory structures. In this paper, we design a new structure for content addressable memory cell in QCA. For this purpose, first, a unique gate is introduced for mask operation in QCA and then this gate is used to improve the performance of CAM. These structures are evaluated with QCADesigner simulator.