|کد مقاله||سال انتشار||مقاله انگلیسی||ترجمه فارسی||تعداد کلمات|
|140661||2018||8 صفحه PDF||سفارش دهید||2913 کلمه|
Publisher : Elsevier - Science Direct (الزویر - ساینس دایرکت)
Journal : Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Volume 895, 1 July 2018, Pages 35-39
The conversion gain of the CMOS image sensor (CIS) is one of the most important key parameters to the CIS detector. The conversion gain degradation induced by radiation damage will seriously affect the performances of the CIS detector. The experiments of the CISs irradiated by protons, neutrons, and gamma rays are presented. The CISs have 4 Megapixels and pinned photodiode (PPD) pixel architecture with a standard 0.18 Î¼m CMOS technology. The conversion gains versus the proton fluence (including the proton ionizing dose), neutron fluence and gamma total ionizing dose are presented, respectively. The mechanisms of the conversion gain degradation induced by radiation damage are analyzed in details. The investigations will help to improve the PPD CIS detector design, reliability and applicability for applications in the harsh radiation environments such as space and nuclear environments.