|کد مقاله||سال انتشار||تعداد صفحات مقاله انگلیسی||ترجمه فارسی|
|147222||2018||9 صفحه PDF||سفارش دهید|
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Publisher : Elsevier - Science Direct (الزویر - ساینس دایرکت)
Journal : Materials Science in Semiconductor Processing, Volume 73, January 2018, Pages 83-91
Graphitic carbon nitride (g-C3N4) is a well-known photocatalyst. In this work, the NO removal efficiency of g-C3N4 irradiated under various light sources is explored. For achieving high productivity and activity photocatalyst, the pyrolysis temperature is adjusted from 450Â Â°C to 600Â Â°C. All prepared g-C3N4 are put into a transparent reaction box one by one to remove the NO with the initial concentration of 1000 ppb level in air flow under real indoor illumination of three light resources: metal halide lamp, LED lamp and high pressure sodium lamp. According to the photocatalytic reaction results, the NO removal ratio of g-C3N4 synthesized under 500Â Â°C can reach to 29.26% under the irradiation of metal halide lamp, overwhelming that of g-C3N4 irradiated under other light sources. Several characterization methods were adopt to analyze the photocatalytic reaction mechanism and the micro structures of g-C3N4 prepared from melamine. Because of the conduction band potential difference between g-C3N4 and melem, heterojunction of melem and g-C3N4 can form the convention-type charge transfer, which greatly reduce the combination ratio of photogenerated electrons and holes, thus enhance the photocatalytic activity of g-C3N4 under the irradiation of metal halide lamp indicating why the g-C3N4 synthesized under 500Â Â°C possesses the best NO removal efficiency among these samples. In addition, compared with other lamps, metal halide lamp is proved to be the most suitable light resource to motivate g-C3N4 because of its relatively concentrated light intensity. The present work provide us new perspectives for selecting suitable light resources and proper synthesis conditions for the generation of g-C3N4 to achieve better air purification performance in tunnels and indoors.