|کد مقاله||سال انتشار||مقاله انگلیسی||ترجمه فارسی||تعداد کلمات|
|152392||2017||22 صفحه PDF||سفارش دهید||4453 کلمه|
Publisher : Elsevier - Science Direct (الزویر - ساینس دایرکت)
Journal : Infrared Physics & Technology, Volume 84, August 2017, Pages 21-27
In this paper, we present a range of modeling tools that are used in the design and performance evaluation of type-II superlattice detectors. Among these is an optical and photo carrier transport model for the spectral total external QE, which takes into account carrier diffusion length. Using this model, the diffusion length is extracted from external quantum efficiency measurements. It can also be used to fine-tune an optical cavity in relation to the wavelength range of interest for optimal quantum efficiency. Furthermore, an electrical device model for band bending, dark current and doping optimization is described. The modeling tools are discussed and examples of their use are given for MWIR type-II detectors based on InAs/AlSb/GaSb superlattices.