دانلود مقاله ISI انگلیسی شماره 159137
کد مقاله سال انتشار مقاله انگلیسی ترجمه فارسی تعداد کلمات
159137 2017 7 صفحه PDF سفارش دهید 4763 کلمه
خرید مقاله
پس از پرداخت، فوراً می توانید مقاله را دانلود فرمایید.
عنوان انگلیسی
Phase change memory cell emulator circuit design
منبع

Publisher : Elsevier - Science Direct (الزویر - ساینس دایرکت)

Journal : Microelectronics Journal, Volume 62, April 2017, Pages 65-71

پیش نمایش مقاله
پیش نمایش مقاله

چکیده انگلیسی

This paper presents a novel phase change memory (PCM) cell emulator circuit design created solely with off-the-shelf discrete electronic components. The designed emulator circuit reproduces PCM cell behavior in terms of temperature across the cell, threshold voltage, and programmed resistance levels in response to a given input. The presented circuit is designed and tested in simulation environment using LTSpice. The circuit was then built with CMOS 0.35 µm technology along with other off-the-shelf discrete components. The designed emulator circuit successfully generated the operational features of a PCM cell. The emulator circuit assessed the impact of the programming time, produced the standard I-V characteristics of a PCM element and retained the stored data throughout the duration of operation. Furthermore, the simulation and experimental results of the designed emulator circuit were found to be in close agreement with the experimental data obtained from an actual Ge2Sb2Te5 (GST) based PCM element.

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پس از پرداخت، فوراً می توانید مقاله را دانلود فرمایید.