انتخاب الگوهای کالیبراسیون PSF بر اساس تجزیه و تحلیل حساسیت
|کد مقاله||سال انتشار||مقاله انگلیسی||ترجمه فارسی||تعداد کلمات|
|26894||2013||5 صفحه PDF||سفارش دهید||محاسبه نشده|
Publisher : Elsevier - Science Direct (الزویر - ساینس دایرکت)
Journal : Microelectronic Engineering, Volume 112, December 2013, Pages 282–286
Proximity effects in electron beam lithography impact feature dimensions, pattern fidelity and uniformity. These effects are addressed using a mathematical model representing the effect of the electron exposure and the subsequent effect of the resist. Therefore, one of the key steps of any proximity effect correction procedure is to determine properly the parameters of the model. However, the approach of extracting the parameters of a model based on measurements requires that the patterns measured are sensitive enough to the characteristics of the process that are described by the model. In this work it is presented a sensitivity analysis technique that allows the evaluation of the capability of a given test pattern to provide information over every parameter of a proposed model. Finally, a test pattern is presented in order to validate this approach. The proposed pattern is evaluated by the sensitivity analysis techniques described on this paper and then a calibration procedure is executed based on simulation results (with and without noise). Results shows accurate model calibration when the pattern set presents sensitivity to all its parameters.