رشد و کنترل کیفیت از HBT SiGe مبتنی بر MBE برای برنامه های کاربردی آمپلی فایر
|کد مقاله||سال انتشار||مقاله انگلیسی||ترجمه فارسی||تعداد کلمات|
|4684||2003||3 صفحه PDF||سفارش دهید||735 کلمه|
Publisher : Elsevier - Science Direct (الزویر - ساینس دایرکت)
Journal : Microelectronics Journal, Volume 34, Issues 5–8, May–August 2003, Pages 587–589
This study aims at getting precise growth and doping control of the well-designed multiple SiGe heterostructure layers for amplifier applications using MBE. Large efforts have been made in calibrating the deposition rates of Si and Ge, and the doping concentrations, in order to ensure the high quality growth. The measured cutoff frequency was 5.1 GHz, which is not high but in an agreement with the simulated value (5.6 GHz) made by Medici for such a large size device without using device isolation. Finally, the development of test amplifiers, using the developed SiGe HBT technology, is underway. The broad-band low-noise amplifier with the certain functions has been obtained.
With the development of modern electronics, there are steadily increased demands for high performance analog ICs. The implementation of SiGe HBTs into the analog IC technology can bring important advantages in IC design for reaching a high operational frequency and a speed limit, but there are some critical requirements for the design of SiGe layer structures, which should be carefully produced.
نتیجه گیری انگلیسی
Using MBE-based SiGe materials, high-quality HBT devices have been made. Also test SiGe amplifiers have been developed.