سلول های جدید حافظه پیکربندی برای FPGA در تکنولوژی CMOS در مقیاس نانو
|کد مقاله||سال انتشار||مقاله انگلیسی||ترجمه فارسی||تعداد کلمات|
|56053||2011||21 صفحه PDF||سفارش دهید||9351 کلمه|
Publisher : Elsevier - Science Direct (الزویر - ساینس دایرکت)
Journal : Microelectronics Journal, Volume 42, Issue 11, November 2011, Pages 1187–1207
In nano-scaled CMOS technology, the reduction of soft error rate and leakage current are the most important challenges in designing Field Programmable Gate Arrays (FPGA). To overcome these challenges, based on the observations that most configuration bit-streams of FPGA are zeros across different designs and that configuration memory cells are not directly involved with signal propagation delays in FPGA, this paper presents three new low-leakage and hardened configuration memory cells for nano-scaled CMOS technology. These cells are completely hardened when zeros are stored in the cells and cannot flip from particle strikes at the sensitive cell nodes. These cells retain their data with leakage currents and positive feedback without a refresh cycle. Simulation results show that the proposed cells are working correctly during their configuration and idle cycles and that our cells have a lower soft error rate and leakage current in 22-nm as well as in 65-nm technologies.