فن آوری های CMOS با تحرک بالا با استفاده از کانال های III-V/GE بر روی پلت فرم Si
|کد مقاله||سال انتشار||مقاله انگلیسی||ترجمه فارسی||تعداد کلمات|
|56098||2013||7 صفحه PDF||سفارش دهید||4573 کلمه|
Publisher : Elsevier - Science Direct (الزویر - ساینس دایرکت)
Journal : Solid-State Electronics, Volume 88, October 2013, Pages 2–8
MOSFETs using channel materials with high mobility and low effective mass have been regarded as strongly important for obtaining high current drive and low supply voltage CMOS under sub 10 nm regime. From this viewpoint, attentions have recently been paid to Ge and III–V channels. In this paper, possible solutions for realizing III–V/Ge MOSFETs on the Si platform are presented. The high quality III–V channel formation on Si substrates can be realized through direct wafer bonding. The gate stack formation is constructed on a basis of atomic layer deposition (ALD) Al2O3 gate insulators for both InGaAs and Ge MOSFETs. As the source/drain (S/D) formation, Ni-based metal S/D is implemented for both InGaAs and Ge MOSFETs. By combining these technologies, we demonstrate successful integration of InGaAs-OI nMOSFETs and Ge p-MOSFETs on a same wafer and their superior device performance.