SrHfO3 به عنوان دی الکتریک گیت برای تکنولوژی CMOS آینده
|کد مقاله||سال انتشار||مقاله انگلیسی||ترجمه فارسی||تعداد کلمات|
|56103||2007||5 صفحه PDF||سفارش دهید||محاسبه نشده|
Publisher : Elsevier - Science Direct (الزویر - ساینس دایرکت)
Journal : Microelectronic Engineering, Volume 84, Issues 9–10, September–October 2007, Pages 1869–1873
Thin epitaxial films of the high-κ perovskite SrHfO3 were grown by molecular beam epitaxy on Si(100) and investigated by ellipsometry and X-ray photoelectron spectroscopy to determine its band gap and valence band offset. Conducting AFM shows a good correlation between topography and current mapping, pointing to direct tunneling conduction. Long channels MOSFETs with low equivalent oxide thickness (EOT) were fabricated and their channel mobility measured. Mobility enhancement can be achieved by post processing annealing in various gases but at the cost of interfacial regrowth. An alternative approach is to increase mobility without changing EOT is by electrically stressing the gate dielectric at ∼150 °C.