توسعه آرایه سنسور مقیاس پذیر با استفاده از تکنولوژی CMOS استاندارد
|کد مقاله||سال انتشار||مقاله انگلیسی||ترجمه فارسی||تعداد کلمات|
|56105||2004||6 صفحه PDF||سفارش دهید||3522 کلمه|
Publisher : Elsevier - Science Direct (الزویر - ساینس دایرکت)
Journal : Sensors and Actuators B: Chemical, Volume 103, Issues 1–2, 29 September 2004, Pages 37–42
This paper describes an approach to developing MOSFET-based scalable sensor arrays in an unmodified standard CMOS process. The multiplexed design can be used as either a single-ended or differential circuit to make potentiometric measurements in each cell of the array. The FET-based sensors employ a floating gate electrode structure and use the nitride passivation layer as a pH-sensitive membrane. An implementation of a single-chip 2×2 array fabricated in an unmodified commercial 0.35 μm CMOS process is presented. All signal acquisition is performed in-situ and all readout circuitry is located on-chip. On return from the foundry, the devices are exposed to ultraviolet light to eliminate any difference in threshold voltage. The circuit provides a sufficient linear range that allows the FET devices to operate as pH sensors in the array. A double layer of SU-8 photoresist is used to provide both a biocompatible and waterproof package for the chip. The biocompatibility of the chip surface is investigated using a well-established cell line.