دانلود مقاله ISI انگلیسی شماره 56168
عنوان فارسی مقاله

دیود حرارتی به حالت تعلیق درآمده (> 300 ° C) با درجه حرارت فوق العاده بالا در تکنولوژی SOI CMOS

کد مقاله سال انتشار مقاله انگلیسی ترجمه فارسی تعداد کلمات
56168 2010 7 صفحه PDF سفارش دهید محاسبه نشده
خرید مقاله
پس از پرداخت، فوراً می توانید مقاله را دانلود فرمایید.
عنوان انگلیسی
Ultra-high temperature (>300 °C) suspended thermodiode in SOI CMOS technology
منبع

Publisher : Elsevier - Science Direct (الزویر - ساینس دایرکت)

Journal : Microelectronics Journal, Volume 41, Issue 9, September 2010, Pages 540–546

کلمات کلیدی
SOI؛ CMOS - دیود حرارتی؛ RTDs؛ سنسور با درجه حرارت بالا؛ سنسور هوشمند
پیش نمایش مقاله
پیش نمایش مقاله دیود حرارتی به حالت تعلیق درآمده (> 300 ° C) با درجه حرارت فوق العاده بالا در تکنولوژی SOI CMOS

چکیده انگلیسی

This paper reports for the first time on the performance and long-term stability of a silicon on insulator (SOI) thermodiode with tungsten metallization, suspended on a dielectric membrane, at temperatures beyond 300 °C. The thermodiode has been designed and fabricated with minute saturation currents (due to both small size and the use of SOI technology) to allow an ultra-high temperature range and minimal non-linearity. It was found that the thermodiode forward voltage drop versus temperature plot remains linear up to 500 °C, with a non-linearity error of less than 7%. Extensive experimental results on performance of the thermodiode that was fabricated using a Complementary Metal Oxide Semiconductor (CMOS) SOI process are presented. These results are backed up by infrared measurements and a range of 2-D (dimension) and 3-D simulations using ISE and ANSYS software. The on-chip drive electronics for the thermodiode and the micro-heater, as well as the sensor transducing circuit were placed adjacent to the membrane. We demonstrate that the thermodiode is considerably more reliable in long-term direct current operation at high temperatures when compared to the more classical resistive temperature detectors (RTDs) using CMOS metallization layers (tungsten or aluminum). We also compare a membrane thermodiode with a reference thermodiode placed on the silicon substrate and assess their relative performance at elevated temperatures. The experimental results from this comparison confirm that the thermodiode suffers minimal piezo-junction/piezo-resistive effects.

خرید مقاله
پس از پرداخت، فوراً می توانید مقاله را دانلود فرمایید.