تشخیص ناهنجاری برای IGBT ها با استفاده از فاصله Mahalanobis
|کد مقاله||سال انتشار||مقاله انگلیسی||ترجمه فارسی||تعداد کلمات|
|76885||2015||6 صفحه PDF||سفارش دهید||محاسبه نشده|
Publisher : Elsevier - Science Direct (الزویر - ساینس دایرکت)
Journal : Microelectronics Reliability, Volume 55, Issue 7, June 2015, Pages 1054–1059
In this study, a Mahalanobis distance (MD)-based anomaly detection approach has been evaluated for non-punch through (NPT) and trench field stop (FS) insulated gate bipolar transistors (IGBTs). The IGBTs were subjected to electrical–thermal stress under a resistive load until their failure. Monitored on-state collector–emitter voltage and collector–emitter currents were used as input parameters to calculate MD. The MD values obtained from the healthy data were transformed using a Box–Cox transform, and three standard deviation limits were obtained from the transformed data. The upper three standard deviation limits of the transformed MD healthy data were used as a threshold for anomaly detection. The anomaly detection times obtained by using the MD approach were compared to the detection times obtained by using a fixed percentage change threshold for the on-state collector–emitter voltage.