مدل سازی برنامه فلش با استفاده از تکنیک های غیر شبه استاتیک و تونل زنی
|کد مقاله||سال انتشار||مقاله انگلیسی||ترجمه فارسی||تعداد کلمات|
|78506||2012||5 صفحه PDF||سفارش دهید||3815 کلمه|
Publisher : Elsevier - Science Direct (الزویر - ساینس دایرکت)
Journal : Microelectronic Engineering, Volume 96, August 2012, Pages 40–44
We present a detailed and accurate physics based transient simulation for modeling flash memory programming characteristics using nonquasi-static and tunneling equations versus the typical Lucky-Electron Model. The result is a set of simple expressions that were originally developed for a MOSFET and adapted for use in floating gate memory. Of greater importance is the extensive use of physical parameters as opposed to the scale factors and probabilities used in other models. This technique allows floating gate memory designers to determine the nominal programming characteristics of single-level and multi-level memory cells prior to the fabrication process. This technique also allows designers to determine the effects of fabrication tolerances on the performance of the memory cell. The accuracy of this model was validated through comparison with experimental data and simulation results presented in several publications.