الکترود و رابط بهینه شده برای افزایش قابلیت اطمینان از خازن های فلزی فلز فولادی بر پایه بالا

It is shown that the reliability of high-k MIM capacitors is significantly dominated by the kind of pre-treatment of the Si substrate and also by the deposition temperature of the metal nitride top electrode. As a result, it is recommended to introduce chemical oxidation of the substrate before MIM deposition as well as lowering the deposition temperature to about 400 °C for the top TiN electrode in order to enhance the lifetime of the MIM dielectric.