مهندسی ReRAM برای مصارف چگالی زیاد

Resistive random access memory (ReRAM) devices are emerging candidates for the next generation of nonvolatile high-density memory (Sills et al., 2014). The value proposition for this technology is bit alterability, high speed operation, long retention and high endurance. In addition, low-power and low-current operation is highly desirable for high-density memory systems targeting the growing mobile market. This paper presents various challenges in engineering a ReRAM cell suitable for high-density applications such as material selection, programming algorithms, noise issues and scaling path.