دانلود مقاله ISI انگلیسی شماره 153725
ترجمه فارسی عنوان مقاله

اثر موقعیت چاه کوانتومی بر ویژگی های اعوجاج لیزر ترانزیستور

عنوان انگلیسی
Effect of quantum well position on the distortion characteristics of transistor laser
کد مقاله سال انتشار تعداد صفحات مقاله انگلیسی
153725 2018 7 صفحه PDF
منبع

Publisher : Elsevier - Science Direct (الزویر - ساینس دایرکت)

Journal : Optics Communications, Volume 414, 1 May 2018, Pages 22-28

پیش نمایش مقاله
پیش نمایش مقاله  اثر موقعیت چاه کوانتومی بر ویژگی های اعوجاج لیزر ترانزیستور

چکیده انگلیسی

The effect of quantum well position on the modulation and distortion characteristics of a 1300 nm transistor laser is analyzed in this paper. Standard three level rate equations are numerically solved to study this characteristics. Modulation depth, second order harmonic and third order intermodulation distortion of the transistor laser are evaluated for different quantum well positions for a 900 MHz RF signal modulation. From the DC analysis, it is observed that optical power is maximum, when the quantum well is positioned near base–emitter interface. The threshold current of the device is found to increase with increasing the distance between the quantum well and the base–emitter junction. A maximum modulation depth of 0.81 is predicted, when the quantum well is placed at 10 nm from the base–emitter junction, under RF modulation. The magnitude of harmonic and intermodulation distortion are found to decrease with increasing current and with an increase in quantum well distance from the emitter base junction. A minimum second harmonic distortion magnitude of −25.96 dBc is predicted for quantum well position (230 nm) near to the base–collector interface for 900 MHz modulation frequency at a bias current of 20 Ibth. Similarly, a minimum third order intermodulation distortion of −38.2 dBc is obtained for the same position and similar biasing conditions.