آلکیل یتیم اکسید آلومینیوم تیتانیوم دی الکتریک برای عملکرد بالا ترانزیستورهای نازک روی اکسید روی

In this study, we evaluated the structural, chemical, and electrical properties of ternary alloy aluminum yttrium oxide (Al2-xYxO3) films prepared by employing a low-cost spin-cast technique. Al2-xYxO3 films annealed at 400 °C were found to possess smooth and excellent insulating characteristics compared to their binary Al2O3 or Y2O3 film counterparts. This superior performance of the Al2-xYxO3 films as a gate insulator can be explained based on structure stabilization from the cation alloying mixing effect. The amorphous indium zinc oxide (a-IZO) thin-film transistor (TFT) with the ternary alloy Al0.45Y1.55O3 film exhibited a high mobility of 52.9 cm2/V, a low subthreshold gate swing of 0.19 V/decade, a threshold voltage of −0.51 V, a high ION/OFF ratio of 4 × 106, and good hysteresis-free stability, suggesting that the solution-based Al0.45Y1.55O3 dielectric film is an attractive candidate as a gate dielectric for high-performance and low-cost a-IZO TFTs.