دانلود مقاله ISI انگلیسی شماره 144423
ترجمه فارسی عنوان مقاله

ساخت واکسن ژرمانیوم بر روی دیوار با استفاده از روش آسان

عنوان انگلیسی
Fabrication of high-hole-mobility germanium-on-insulator wafers through an easy method
کد مقاله سال انتشار تعداد صفحات مقاله انگلیسی
144423 2018 25 صفحه PDF
منبع

Publisher : Elsevier - Science Direct (الزویر - ساینس دایرکت)

Journal : Journal of Alloys and Compounds, Volume 750, 25 June 2018, Pages 182-188

پیش نمایش مقاله
پیش نمایش مقاله  ساخت واکسن ژرمانیوم بر روی دیوار با استفاده از روش آسان

چکیده انگلیسی

In this work, an easy method for fabricating germanium on insulator (GeOI) was demonstrated through epitaxy process (the growth of Ge on silicon wafer), benzocyclobutene bonding, and film transfer. The method is highly reliable for the fabrication of GeOI, which is a complete 2 inch wafer with homogeneous and excellent material quality. Moreover, atomic force microscopy (AFM), transmission electron microscopy (TEM), and Raman spectroscopy showed that GeOI exhibits good surface and high crystal quality. GeOI has a good interface between transferred Ge and insulator because of the protective layer of SiO2 on Ge before bonding. Furthermore, a back-gate p-type metal–oxide–semiconductor field-effect transistors (MOSFET) based on GeOI showed an excellent performance due to good interface and high-quality Ge channel. A peak field-effect hole mobility as high as 332.6 cm2/V·s was obtained, which is close to that of a best pseudo-MOSFET based on GeOI by Smart Cut™ (400 cm2/V·s).