مطالعه شبیه سازی تحرک الکترون در ترانزیستورهای اثر میدانی عایق فلزی نیمه رسانا MoS2 چندلایه ای

This work analyzes the electron mobility in few-layer MoS2-based metal–insulator-semiconductor field-effect transistors. To do it, the Poisson and Schrödinger equations are self consistently solved using the effective mass approximation to model the six equivalent ΛΛ valleys characteristic of multilayer MoS2. The mobility is calculated using the Kubo-Greenwood approach under the momentum relaxation time approximation. The influence of the semiconductor thickness, the temperature and the bias conditions are analyzed. A good agreement with the experimental results presented in the literature is achieved, with electron mobilities ranging between 140 and 200cm2V-1s-1 at T=300K.