تجزیه و تحلیل طیف تحرک از حمل و نقل حامل در رابط مقره / نیمه هادی

In this work, we review the results of mobility spectrum analysis (MSA) based studies of electronic transport in GaN-based high electron mobility field effect transistor (HEMT) structures, including recent progress in the modelling of mobility distributions and carrier scattering in two-dimensional electron gases in AlGaN/GaN HEMTs. It is shown that the MSA approach can provide crucial information for epitaxial growth process optimisation, since it allows identification of parasitic conduction channels, and can also yield greater insight into the fundamental scattering mechanism and electronic transport phenomena in two-dimensional inversion and accumulation layers. Furthermore, the availability of high quality insulator/semiconductor-like heterostructures, wherefrom high resolution mobility spectra can be obtained, is stimulating progress into the modelling and simulation of carrier mobility spectra and mobility distributions.