دانلود مقاله ISI انگلیسی شماره 57733
ترجمه فارسی عنوان مقاله

اکسید لایه نازک در ناحیه ریختی نیمه هادی اکسید فلزی به طور دو طرفه در سیلیکون بر روی مقره: ساختار جدیدی که امکان ترانزیستورهای قابل اعتماد با درجه حرارت بالا را فراهم می کند

عنوان انگلیسی
Thin layer oxide in the drift region of Laterally double-diffused metal oxide semiconductor on silicon-on-insulator: A novel device structure enabling reliable high-temperature power transistors
کد مقاله سال انتشار تعداد صفحات مقاله انگلیسی
57733 2015 6 صفحه PDF
منبع

Publisher : Elsevier - Science Direct (الزویر - ساینس دایرکت)

Journal : Materials Science in Semiconductor Processing, Volume 30, February 2015, Pages 599–604

چکیده انگلیسی

In this paper a new lateral double diffused metal oxide semiconductor (LDMOS) transistor on silicon-on-insulator (SOI) technology is reported. In the proposed structure a trench oxide in the drift region is reformed to reduce surface temperature. In the LDMOS devices one way for achieving high breakdown voltage is incorporating the trench oxide in the drift region. But, this strategy causes high lattice temperature in the device. So, the middle of the trench oxide in the drift region is etched and filled with the silicon to have higher thermal conductivity material and reduce the lattice temperature in the drift region. The simulation with two-dimensional ATLAS simulator shows that the novel thin trench oxide in the n-drift region of LDMOS transistor (TT-LDMOS) have lower maximum lattice temperature with an acceptable breakdown voltage in respect to the conventional LDMOS (C-LDMOS) structure with the trench oxide in the drift region. So, TT-LDMOS can be a reliable device for power transistors.