نگرانی قابلیت اطمینان و طراحی برای ترانزیستور دو قطبی دروازه عایق جانبی بر اساس لایه SOI

In this paper, the reliability issues of the lateral insulator gate bipolar transistor based on SOI substrate (SOI-LIGBT), including the anode punch-through, the terminal early breakdown, the hot-carrier degradation and the latch-up failure, have been experimentally investigated and improved. The measurement results and the T-CAD simulations demonstrate that the proposed device owns higher reliability, which can be applied well as the output driver device of the power ICs.