دانلود مقاله ISI انگلیسی شماره 76885
ترجمه فارسی عنوان مقاله

تشخیص ناهنجاری برای IGBT ها با استفاده از فاصله Mahalanobis

عنوان انگلیسی
Anomaly detection for IGBTs using Mahalanobis distance
کد مقاله سال انتشار تعداد صفحات مقاله انگلیسی
76885 2015 6 صفحه PDF
منبع

Publisher : Elsevier - Science Direct (الزویر - ساینس دایرکت)

Journal : Microelectronics Reliability, Volume 55, Issue 7, June 2015, Pages 1054–1059

ترجمه کلمات کلیدی
تشخیص ناهنجاری؛ تشخیص خطا؛ فاصله Mahalanobis؛ IGBT
کلمات کلیدی انگلیسی
Anomaly detection; Fault detection; Mahalanobis distance; IGBT
پیش نمایش مقاله
پیش نمایش مقاله  تشخیص ناهنجاری برای IGBT ها با استفاده از فاصله Mahalanobis

چکیده انگلیسی

In this study, a Mahalanobis distance (MD)-based anomaly detection approach has been evaluated for non-punch through (NPT) and trench field stop (FS) insulated gate bipolar transistors (IGBTs). The IGBTs were subjected to electrical–thermal stress under a resistive load until their failure. Monitored on-state collector–emitter voltage and collector–emitter currents were used as input parameters to calculate MD. The MD values obtained from the healthy data were transformed using a Box–Cox transform, and three standard deviation limits were obtained from the transformed data. The upper three standard deviation limits of the transformed MD healthy data were used as a threshold for anomaly detection. The anomaly detection times obtained by using the MD approach were compared to the detection times obtained by using a fixed percentage change threshold for the on-state collector–emitter voltage.