سلول های خورشیدی پلیمری با عملکرد بالا با کاهش جزئی اکسید گرافن به عنوان یک لایه انتقال دهنده حفره کارآمد

As an alternative to the poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) hole transporting layer (HTL) in polymer solar cells (PSCs), moderately reduced graphene oxide (GO) films fabricated by simple and fast thermal treatment of solution processed GO were investigated. PSC with thermally treated GO at 250 °C exhibited best performance with a power conversion efficiency (PCE) of 3.98%, compared to the PSC containing conventional PEDOT:PSS HTL with a PCE of 3.85%. Furthermore, the PSC with thermally treated GO showed superior stability compared to the PSC with conventional PEDOT:PSS HTL under the atmosphere condition without any encapsulation process. Our demonstration suggests that moderately reduced GO by simple thermal treatment could be promising HTL replacing PEDOT:PSS in PSCs as well as other organic electronics.