دانلود مقاله ISI انگلیسی شماره 145698
ترجمه فارسی عنوان مقاله

بررسی تاثیر الکتروگرگازی بر عملکرد و قابلیت اطمینان مدارهای مجتمع در سطح طراحی

عنوان انگلیسی
Study of the impact of electromigration on integrated circuit performance and reliability at design level
کد مقاله سال انتشار تعداد صفحات مقاله انگلیسی
145698 2017 6 صفحه PDF
منبع

Publisher : Elsevier - Science Direct (الزویر - ساینس دایرکت)

Journal : Microelectronics Reliability, Volumes 76–77, September 2017, Pages 75-80

ترجمه کلمات کلیدی
اتصال الکترو مهاجرت، قابلیت اطمینان، عملکرد مدار،
کلمات کلیدی انگلیسی
Interconnect; Electromigration; Reliability; Circuit performance;
پیش نمایش مقاله
پیش نمایش مقاله  بررسی تاثیر الکتروگرگازی بر عملکرد و قابلیت اطمینان مدارهای مجتمع در سطح طراحی

چکیده انگلیسی

Electromigration damage in interconnects is a well-known bottleneck of integrated circuits, as it is responsible for the performance degradation. High values of temperature and current density accelerate the damage, causing an increase in the lines resistance and circuit lifetime reduction. In this work, a method is proposed to evaluate the electromigration effects in an operational amplifier circuit performance due the void growth induced by electromigration. The performance parameters are simulated by AC, DC and transient analysis for a specific temperature and time interval and the results are compared with a circuit free of electromigration. The method is used to investigate the circuit response regarding the unit gain frequency, voltage gain, cutoff frequency, output swing voltage and settling time. There are three lines that can be traditionally classified as critical due to the large current density they carry. Nevertheless, a fourth line, which has a current density below the maximum limit set by the technology being typically considered as non-critical from the layout design point of view, leads to significant reduction of the voltage gain and voltage swing, of about 59% and 14% in 5 years.