دانلود مقاله ISI انگلیسی شماره 159137
ترجمه فارسی عنوان مقاله

طراحی مدار شبیه ساز سلول حافظه فاز

عنوان انگلیسی
Phase change memory cell emulator circuit design
کد مقاله سال انتشار تعداد صفحات مقاله انگلیسی
159137 2017 7 صفحه PDF
منبع

Publisher : Elsevier - Science Direct (الزویر - ساینس دایرکت)

Journal : Microelectronics Journal, Volume 62, April 2017, Pages 65-71

ترجمه کلمات کلیدی
حافظه تغییر فاز، حافظه اووونیک، تعویض آستانه، کلسنگید حافظه غیر فرار شبیه ساز جزء گسسته
کلمات کلیدی انگلیسی
Phase Change Memory; Ovonic memory; Threshold switching; Chalcogenide; Non-volatile memory; Emulator; Discrete component;
پیش نمایش مقاله
پیش نمایش مقاله  طراحی مدار شبیه ساز سلول حافظه فاز

This paper presents a novel phase change memory (PCM) cell emulator circuit design created solely with off-the-shelf discrete electronic components. The designed emulator circuit reproduces PCM cell behavior in terms of temperature across the cell, threshold voltage, and programmed resistance levels in response to a given input. The presented circuit is designed and tested in simulation environment using LTSpice. The circuit was then built with CMOS 0.35 µm technology along with other off-the-shelf discrete components. The designed emulator circuit successfully generated the operational features of a PCM cell. The emulator circuit assessed the impact of the programming time, produced the standard I-V characteristics of a PCM element and retained the stored data throughout the duration of operation. Furthermore, the simulation and experimental results of the designed emulator circuit were found to be in close agreement with the experimental data obtained from an actual Ge2Sb2Te5 (GST) based PCM element.