پارامترهای منطقهای مخلوط حالت برای مقادیر زیر مقیاس میکرون برای پیش بینی قابلیت اطمینان دستگاه میکرو الکترونیک

This work focuses on developing framework based on cohesive zone modeling approach to study interfacial delamination in sub-micron thick layers. Such a framework is then successfully applied to predict microelectronic device reliability. As intentionally creating pre-fabricated cracks in such interfaces is difficult, this work examines a combination of four-point bend and double-cantilever beam tests to create initial cracks and to develop cohesive zone parameters over a range of mode mixity. Similarly, a combination of four-point bend and end-notch flexure tests is used to cover additional range of mode mixity. In these tests, silicon wafers obtained from wafer foundry are used for experimental characterization. The developed parameters are then used in actual microelectronic device to predict the onset and propagation of crack, and the results from such predictions are successfully validated with experimental data.