طراحی گیت های منطقی حالت فعلی کم توان با استفاده از سلول های مغناطیسی

Non-volatile logic is a viable solution to overcome the leakage power issue which has become a major obstacle to CMOS technology scaling. Magnetic tunnel junction (MTJ)-based logic is a promising approach because of the non-volatility, less occupied area, almost zero static power consumption, programmability. This paper presents current mode logic gates using MTJ elements without any intermediate electronic circuitry. This efficient solution reduces the performance overheads of the spintronic logic circuits while simplifying fabrication. Hspice based simulations have been carried out to verify the performance of different logic gates. The simulation results reveal that the SBEG based gates provide less area, power consumption, and energy while also offering less design complexity as compared to mLogic (previously proposed magnetic logic) and CMOS gates.