ترانزیستور اثر میدانی مغناطیسی تخلیه اسپلیت بخش بر اساس تکنولوژی CMOS استاندارد

A novel sector split-drain magnetic field-effect transistor (MAGFET), which is compatible with standard 0.6 μm N-well CMOS technology, has been suggested and an analytical model of the sector MAGFET is also developed. The model of sector MAGFET is focused on the effect of primary geometric parameters to sensor sensitivity. In order to verify the advantage of the sector MAGFET, the sector structure is also compared with traditional rectangle structure by the simulations and the experiments. The maximum sensor sensitivity of 3.77%/T of the sector MAGFET is obtained by the experimental results and improvements of sensitivity are attributed to sector structure.