ویژگی دمای ترانزیستورهای دوقطبی ساخته شده در تکنولوژی CMOS

This paper presents the results of an experimental investigation of the temperature characteristics of bipolar transistors fabricated in CMOS technology. These results have to be known and understood to enable the design of high-performance temperature sensors and bandgap references in CMOS integrated circuits. The non-idealities of proportional to the absolute temperature voltage (VPTAT) have been studied, and the results show that we can generate accurate PTAT voltages by optimizing the operating condition and layout of the transistors (error<0.1%). The measurement results of VBE(IC, T) characteristics show that the existing theory for transistors fabricated in bipolar technology is also quite useful for bipolar substrate transistors fabricated in CMOS technology. We found that the temperature sensors and the bandgap references fabricated in CMOS technology might even be better than those fabricated in bipolar technology.