حساسیت متقابل حرارت صفحه هال در تکنولوژی CMOS ساب میکرون

The temperature coefficient of the current-related sensitivity of a Hall plate in submicron CMOS technology was measured. A zero-temperature-coefficient region was observed. A model of the temperature coefficient based on the freeze-out effect and the temperature dependence of the Hall scattering factor was developed. Using a Hall sensor in the observed zero-temperature-coefficient region may significantly improve its measurement accuracy. The additional, very high influence of mechanical stress, due to the piezo-Hall effect, on the temperature coefficient has been analyzed for two packaging techniques.