تجزیه و تحلیل پلی کربنات پلی اتیلن (دی آمینو فتالن) پلی اتیلن (وینیل الکل)

Bulk Hetrojunction configuration for those electronics devices which require interpenetrating strength with large doner-acepter interfacial area is the matter of concern in microelectronics. At the same time developing p-type conjugated conducting polymers with easy synthesis, high charge carrier mobility, strong absorption properties and suitable energy gap for bulk hetrojunction (BHJ) are also required for sake of efficient applications. BHJ solar cell architecture, where in bulk, phase separation between the two components are required in controlled form are achieved by both accepter and donor materials which enhance the solar cell performance in terms of parameters like power conversion efficiency and fill factor. Poly (diaminonaphthalene) doped Poly (vinyl alcohol) (PDAN doped PVA), a p-type conjugated conducting polymer film, may be the materials for bulk semiconductor hetrostructure. The D.C conductivity at room temperature of PDAN doped PVA film was found to be 2.0408 x 10-4 mho m-1 which gives the mobility in the range of 0.43 cm2/Vs. The economic chemical oxidation method was used for synthesizing PDAN doped PVA films. The Arrhenius plot provides the energy band gap of the order of 1.312 eV which is smaller than the limit 1.77 eV for approximately 700 nm range wavelength of solar spectrum for photovoltaic mechanism. The spatial parameter “redundance” calculated from Atomic Force Microscopy (AFM) which provides the fractal morphology of the sample, was found to be -0.18 for PDAN doped PVA film thus suggests for less disordered surface which satisfies the desired criteria for electronics applications.